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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 DESCRIPTION *With TO-220C package *Complement to type 2SA1123 *Low collector saturation voltage APPLICATIONS *For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 70 6 4 25 150 -50~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1 A; IB=0 IE=1m A; IC=0 IC=4A; IB=0.4A IC=3A ; VCE=4V VCB=100V; IE=0 VEB=6V; IC=0 IC=2.5A ; VCE=3V IC=0.5A ; VCE=10V 50 MIN 70 6 2SC2361 TYP. MAX UNIT V V 1.5 2.0 10 10 240 70 V V A A MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2361 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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